Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
| dc.citation.epage | 123 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 119 | en_US |
| dc.citation.volume | 92 | en_US |
| dc.contributor.author | Chang, TC | en_US |
| dc.contributor.author | Yeh, WK | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.author | Jung, TG | en_US |
| dc.contributor.author | Tsai, WC | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Mei, YJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:52Z | |
| dc.date.available | 2014-12-08T15:02:52Z | |
| dc.date.issued | 1996-02-01 | en_US |
| dc.description.abstract | A series of Si/Si1-xGex disordered superlattices with various degrees of disorder were grown in an ultrahigh vacuum chemical vapor deposition system (UHV/CVD). High-resolution double-crystal X-ray diffraction (HRXRD), and conventional cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical X-ray simulation program was employed to analyze the experimental rocking curves, Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various degrees of disorder. | en_US |
| dc.identifier.doi | 10.1016/0169-4332(95)00213-8 | en_US |
| dc.identifier.issn | 0169-4332 | en_US |
| dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0169-4332(95)00213-8 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1474 | |
| dc.identifier.wosnumber | WOS:A1996UG56100021 | |
| dc.language.iso | en_US | en_US |
| dc.title | Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition | en_US |
| dc.type | Article; Proceedings Paper | en_US |