Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Cheng, Chuan-An | en_US |
| dc.contributor.author | Huang, Yu-Hsiang | en_US |
| dc.contributor.author | Lin, Chicn-Hung | en_US |
| dc.contributor.author | Lee, Chia-Lin | en_US |
| dc.contributor.author | Yang, Shan-Chun | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:09Z | |
| dc.date.available | 2017-04-21T06:49:09Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration. | en_US |
| dc.identifier.isbn | 978-1-4673-9478-9 | en_US |
| dc.identifier.issn | 1930-8868 | en_US |
| dc.identifier.journal | 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/136423 | |
| dc.identifier.wosnumber | WOS:000389022000018 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application | en_US |
| dc.type | Proceedings Paper | en_US |
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