Method for forming gate pattern for electronic device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20070066051 | zh_TW |
| dc.contributor.author | Chen, Szu-Hung | en_US |
| dc.contributor.author | Kuo, Chien-I | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.date.accessioned | 2014-12-16T06:16:07Z | |
| dc.date.available | 2014-12-16T06:16:07Z | |
| dc.date.issued | 2007-03-22 | en_US |
| dc.description.abstract | A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width. | zh_TW |
| dc.identifier.govdoc | H01L021/4763 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105669 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for forming gate pattern for electronic device | zh_TW |
| dc.type | Patents | en_US |