利用MOCVD製備高介電閘極材料之研究
| dc.contributor.author | 趙天生 | en_US |
| dc.contributor.author | TIEN-SHENGCHAO | en_US |
| dc.contributor.department | 國立交通大學電子物理學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:22Z | |
| dc.date.available | 2014-12-13T10:37:22Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2215-E009-117 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=665840&docId=126409 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94576 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 有機金屬化學氣相沈積法 | zh_TW |
| dc.subject | 高介電閘 | zh_TW |
| dc.subject | 製備 | zh_TW |
| dc.subject | MOCVD | en_US |
| dc.subject | High dielectric gate | en_US |
| dc.subject | Formation | en_US |
| dc.title | 利用MOCVD製備高介電閘極材料之研究 | zh_TW |
| dc.title | Study of High-K Dielectrics Formation by MOCVD | en_US |
| dc.type | Plan | en_US |
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