Temperature Dependence of Ionization Rates in GaAs
| dc.citation.epage | 104 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 99 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.contributor.author | 張義昭 | zh_TW |
| dc.contributor.author | 施敏 | zh_TW |
| dc.contributor.author | Y.J.Chang | en_US |
| dc.contributor.author | S.M.Sze | en_US |
| dc.date.accessioned | 2017-10-06T06:17:46Z | |
| dc.date.available | 2017-10-06T06:17:46Z | |
| dc.date.issued | 1969-04 | en_US |
| dc.description.abstract | The ionization rate is one of the most important material parameters of semiconductors. Its temperature dependence has profound effect on the avalanche breakdown voltage of p-n junctions and on the operational characteristics of many semiconductor devices including IMPATT diodes and avalanche photodetectors (1). The ionization rates of electrons and holes in GaAs are measured here in over the temperature range 77°K to 373°K using photomultiplication method. The results are then compared with the modified Baraff theory(2,3), in order to establish a functional dependence of the ionization rate on temperature. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137449 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Temperature Dependence of Ionization Rates in GaAs | en_US |
| dc.type | Campus Publications | en_US |