新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用
| dc.contributor.author | 曾俊元 | en_US |
| dc.contributor.author | TSENG TSEUNG-YUEN | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:02Z | |
| dc.date.available | 2014-12-13T10:46:02Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | NSC102-2221-E009-134-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=8109630&docId=429425 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100587 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用 | zh_TW |
| dc.title | Novel Transparent Resistive Random Access Memory for High Density and Low Power Nonvolatile Memory Application | en_US |
| dc.type | Plan | en_US |
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