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研製耐放射線/輻射線之半導體基板SOI(II)

dc.contributor.author葉清發en_US
dc.contributor.department交通大學zh_TW
dc.date.accessioned2014-12-13T10:39:56Z
dc.date.available2014-12-13T10:39:56Z
dc.date.issued1994en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC83--NSP-O-B-R-DD--009-zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=119264&docId=19795en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/96969
dc.language.isozh_TWen_US
dc.title研製耐放射線/輻射線之半導體基板SOI(II)zh_TW
dc.titleFabrication of Rafation-Hardened Soi Substrate(Ⅱ)en_US
dc.typePlanen_US

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