Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lin, Wei-Liang | en_US |
| dc.contributor.author | Tsai, Wen-Jer | en_US |
| dc.contributor.author | Cheng, C. C. | en_US |
| dc.contributor.author | Lu, Chun-Chang | en_US |
| dc.contributor.author | Ku, S. H. | en_US |
| dc.contributor.author | Chang, Y. W. | en_US |
| dc.contributor.author | Wu, Guan-Wei | en_US |
| dc.contributor.author | Liu, Lenvis | en_US |
| dc.contributor.author | Hwang, S. W. | en_US |
| dc.contributor.author | Lu, Tao-Cheng | en_US |
| dc.contributor.author | Chen, Kuang-Chao | en_US |
| dc.contributor.author | Tseng, Tseung-Yuen | en_US |
| dc.contributor.author | Lu, Chih-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2020-02-02T23:55:33Z | |
| dc.date.available | 2020-02-02T23:55:33Z | |
| dc.date.issued | 2019-01-01 | en_US |
| dc.description.abstract | We investigate a hot-carrier injection- induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a "down-coupling" region and a "pre-charge" regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-turn-on schemes are proposed to mitigate this disturb. | en_US |
| dc.identifier.isbn | 978-1-7281-0942-8 | en_US |
| dc.identifier.issn | 1930-8868 | en_US |
| dc.identifier.journal | 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/153665 | |
| dc.identifier.wosnumber | WOS:000503374900012 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory | en_US |
| dc.type | Proceedings Paper | en_US |
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