TiNx as a new embedded material for attenuated phase shift mask
| dc.citation.epage | 160 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 157 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.contributor.author | Loong, WA | en_US |
| dc.contributor.author | Chen, TC | en_US |
| dc.contributor.author | Tseng, JC | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:02:59Z | |
| dc.date.available | 2014-12-08T15:02:59Z | |
| dc.date.issued | 1996-01-01 | en_US |
| dc.description.abstract | In this paper TiNx (x > 1.3) as a new material suitable for using as an embedded layer for an attenuated phase shift mask (APSM) is presented. TiNx thin film was formed by plasma sputtering under a gas mixture of Ar and N-2 (40:2 sccm). The related characteristics of TiNx at 365 nn (i-line) wavelength are as follows: n (refractive index) similar to 3.07; k (absorbance coefficient) similar to 0.531; R (reflectivity) 27 similar to 30%; rho (resistivity) similar to 52 mu Omega-cm (132 nm on quartz). For required phase shift degree theta=180 degrees, calculated thickness d of TiNx film is 88.2 nn, and transmittance T under 365 nm wavelength at this thickness is 14.5 % which is within the useful range for APSM. TiNx film also has good electrical conductivity, suitable for e-beam direct-write in patterning mask. | en_US |
| dc.identifier.issn | 0167-9317 | en_US |
| dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1577 | |
| dc.identifier.wosnumber | WOS:A1996TV40000035 | |
| dc.language.iso | en_US | en_US |
| dc.title | TiNx as a new embedded material for attenuated phase shift mask | en_US |
| dc.type | Article; Proceedings Paper | en_US |