Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
| dc.citation.epage | 1193 | en_US |
| dc.citation.spage | 1192 | en_US |
| dc.citation.volume | 772 | en_US |
| dc.contributor.author | Yen, ST | en_US |
| dc.contributor.author | Tulupenko, V | en_US |
| dc.contributor.author | Cheng, ES | en_US |
| dc.contributor.author | Dalakyan, A | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Chao, KA | en_US |
| dc.contributor.author | Belykh, V | en_US |
| dc.contributor.author | Abramov, A | en_US |
| dc.contributor.author | Ryzhkov, V | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:15Z | |
| dc.date.available | 2014-12-08T15:25:15Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time. | en_US |
| dc.identifier.isbn | 0-7354-0257-4 | en_US |
| dc.identifier.issn | 0094-243X | en_US |
| dc.identifier.journal | Physics of Semiconductors, Pts A and B | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17621 | |
| dc.identifier.wosnumber | WOS:000230723900552 | |
| dc.language.iso | en_US | en_US |
| dc.title | Direct experimental evidence of the hole capture by resonant levels in boron doped silicon | en_US |
| dc.type | Proceedings Paper | en_US |
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