An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs

dc.citation.epage	1084	en_US
dc.citation.spage	1082	en_US
dc.contributor.author	Chen, Han-Yu	en_US
dc.contributor.author	Chen, Kun-Ming	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:25:19Z
dc.date.available	2014-12-08T15:25:19Z
dc.date.issued	2005	en_US
dc.description.abstract	In this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip.	en_US
dc.identifier.isbn	0-7803-9433-X	en_US
dc.identifier.journal	2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17708
dc.identifier.wosnumber	WOS:000237449901103
dc.language.iso	en_US	en_US
dc.subject	anomalous dip	en_US
dc.subject	base current	en_US
dc.subject	heterojunction bipolar transistor (HBT)	en_US
dc.subject	S-parameters	en_US
dc.subject	SiGe	en_US
dc.title	An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs	en_US
dc.type	Proceedings Paper	en_US

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