高電容比值之矽可變電容二極體
| dc.contributor.author | 趙天生 | en_US |
| dc.contributor.author | TIEN-SHENGCHAO | en_US |
| dc.contributor.department | 交通大學電子物理系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:30:20Z | |
| dc.date.available | 2014-12-13T10:30:20Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC94-2622-E009-010-CC3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1084661&docId=204229 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/90156 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高電容比值之矽可變電容二極體 | zh_TW |
| dc.title | Hyper Abrupt Silicon Varactor Diodes | en_US |
| dc.type | Plan | en_US |
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