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Evaluation of the operation for the shift register circuit implemented by low temperature poly-Si thin-film transistors

dc.citation.epage455en_US
dc.citation.spage453en_US
dc.contributor.authorLiou, Hung-Guangen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:25:30Z
dc.date.available2014-12-08T15:25:30Z
dc.date.issued2005en_US
dc.description.abstractIn this paper, the LTPS TFT shift register circuit is simulated with Monte Carlo method to evaluate the effects due to the non-uniformity in the LTPS TFT characteristics. A computationally efficient method has been presented for the estimation of the power distribution and the yield in the presence of device variations.en_US
dc.identifier.isbn978-957-28522-2-4en_US
dc.identifier.journalIDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17902
dc.identifier.wosnumberWOS:000259399200122
dc.language.isoen_USen_US
dc.titleEvaluation of the operation for the shift register circuit implemented by low temperature poly-Si thin-film transistorsen_US
dc.typeProceedings Paperen_US

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