High-quality GaAs grown on aluminum film
| dc.contributor.author | Cheng, Chia-Chu | en_US |
| dc.contributor.author | Wu, Chu-Chun | en_US |
| dc.contributor.author | Fan, Yen-Ting | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2018-08-21T05:57:10Z | |
| dc.date.available | 2018-08-21T05:57:10Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence. | en_US |
| dc.identifier.issn | 2160-9020 | en_US |
| dc.identifier.journal | 2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147145 | |
| dc.identifier.wosnumber | WOS:000427296202363 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High-quality GaAs grown on aluminum film | en_US |
| dc.type | Proceedings Paper | en_US |
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