Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
| dc.citation.epage | 30 | en_US |
| dc.citation.spage | 29 | en_US |
| dc.contributor.author | Sun, SC | en_US |
| dc.contributor.author | Tsai, MH | en_US |
| dc.contributor.author | Tsai, CE | en_US |
| dc.contributor.author | Chiu, HT | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:27:48Z | |
| dc.date.available | 2014-12-08T15:27:48Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.doi | 10.1109/VLSIT.1995.520844 | en_US |
| dc.identifier.isbn | 0-7803-2602-4 | en_US |
| dc.identifier.journal | 1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VLSIT.1995.520844 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20046 | |
| dc.identifier.wosnumber | WOS:A1995BE44J00013 | |
| dc.language.iso | en_US | en_US |
| dc.title | Performance of MOCVD tantalum nitride diffusion barrier for copper metallization | en_US |
| dc.type | Proceedings Paper | en_US |