Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET
| dc.citation.epage | 72 | en_US |
| dc.citation.spage | 69 | en_US |
| dc.contributor.author | Wang, Sheng-Chun | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.author | Chen, Kun-Ming | en_US |
| dc.contributor.author | Huang, Sheng-Yi | en_US |
| dc.contributor.author | Hung, Cheng-Chou | en_US |
| dc.contributor.author | Huang, Guo-Wei | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:09Z | |
| dc.date.available | 2014-12-08T15:25:09Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (- 25. to 125 degrees C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (f(t) and f(max)), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described. | en_US |
| dc.identifier.isbn | 978-1-4244-4749-7 | en_US |
| dc.identifier.journal | 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17549 | |
| dc.identifier.wosnumber | WOS:000276213900018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET | en_US |
| dc.type | Proceedings Paper | en_US |
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