Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
| dc.citation.epage | 963 | en_US |
| dc.citation.spage | 960 | en_US |
| dc.contributor.author | Chou, Y. L. | en_US |
| dc.contributor.author | Chiu, J. P. | en_US |
| dc.contributor.author | Ma, H. C. | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Chao, Y. P. | en_US |
| dc.contributor.author | Chen, K. C. | en_US |
| dc.contributor.author | Lu, Chih-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:27Z | |
| dc.date.available | 2014-12-08T15:39:27Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method. | en_US |
| dc.identifier.doi | 10.1109/IRPS.2010.5488696 | en_US |
| dc.identifier.isbn | 978-1-4244-5431-0 | en_US |
| dc.identifier.journal | 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/IRPS.2010.5488696 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26942 | |
| dc.identifier.wosnumber | WOS:000287515600164 | |
| dc.language.iso | en_US | en_US |
| dc.title | Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory | en_US |
| dc.type | Article | en_US |