肖基障金氧半場效体之數值模擬
| dc.contributor.author | 郭雙發 | en_US |
| dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:39:31Z | |
| dc.date.available | 2014-12-13T10:39:31Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2215-E009-063 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=665685&docId=126369 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/96585 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 肖特基能障 | zh_TW |
| dc.subject | 金氧半導體場效電晶體 | zh_TW |
| dc.subject | 數值模擬 | zh_TW |
| dc.subject | Schottky barrier | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | Numerical simulation | en_US |
| dc.title | 肖基障金氧半場效体之數值模擬 | zh_TW |
| dc.title | Numerical Simulation of Schottky Barrier MOSFETs | en_US |
| dc.type | Plan | en_US |
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