具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫
| dc.contributor.author | 郭浩中 | en_US |
| dc.contributor.author | Kuo Hao-Chung | en_US |
| dc.contributor.department | 國立交通大學光電工程學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:29Z | |
| dc.date.available | 2014-12-13T10:46:29Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-3114-E009-002-CC2 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1958485&docId=322426 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100788 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫 | zh_TW |
| dc.title | Development of High Internal Quantum Efficiency and Low Droop Gan Leds with Wafer Level Packaging Technique | en_US |
| dc.type | Plan | en_US |
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