On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory
| dc.contributor.author | Lo, Chun-Li | en_US |
| dc.contributor.author | Chen, Mei-Chin | en_US |
| dc.contributor.author | Huang, Jiun-Jia | en_US |
| dc.contributor.author | Hou, Tuo-Hung | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:43Z | |
| dc.date.available | 2014-12-08T15:32:43Z | |
| dc.date.issued | 2013 | en_US |
| dc.identifier.isbn | 978-1-4673-3082-4 | en_US |
| dc.identifier.issn | 1524-766X | en_US |
| dc.identifier.journal | 2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22859 | |
| dc.identifier.wosnumber | WOS:000326324800015 | |
| dc.language.iso | en_US | en_US |
| dc.title | On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory | en_US |
| dc.type | Proceedings Paper | en_US |
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