ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120025270 | zh_TW |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.author | CHANG CHIA-HUA | en_US |
| dc.contributor.author | LIN YUEH-CHIN | en_US |
| dc.date.accessioned | 2014-12-16T06:15:18Z | |
| dc.date.available | 2014-12-16T06:15:18Z | |
| dc.date.issued | 2012-02-02 | en_US |
| dc.description.abstract | This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor. | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/335 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105221 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF | zh_TW |
| dc.type | Patents | en_US |