Oxygen sensors made by monolayer graphene
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 8268 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hung, S. C. | en_US |
| dc.contributor.author | Chen, C. W. | en_US |
| dc.contributor.author | Yang, M. D. | en_US |
| dc.contributor.author | Yeh, C. W. | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Chi, G. C. | en_US |
| dc.contributor.author | Ren, F. | en_US |
| dc.contributor.author | Pearton, S. J. | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2019-04-03T06:47:56Z | |
| dc.date.available | 2019-04-03T06:47:56Z | |
| dc.date.issued | 2012-01-01 | en_US |
| dc.description.abstract | The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio. | en_US |
| dc.identifier.doi | 10.1117/12.907768 | en_US |
| dc.identifier.isbn | 978-0-81948-911-1 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | QUANTUM SENSING AND NANOPHOTONIC DEVICES IX | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.907768 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146315 | |
| dc.identifier.wosnumber | WOS:000300191700054 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Oxygen sensors made by monolayer graphene | en_US |
| dc.type | Proceedings Paper | en_US |