3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hsu, Chung-Wei | en_US |
| dc.contributor.author | Wan, Chia-Chen | en_US |
| dc.contributor.author | Wang, I-Ting | en_US |
| dc.contributor.author | Chen, Mei-Chin | en_US |
| dc.contributor.author | Lo, Chun-Li | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Jang, Wen-Yueh | en_US |
| dc.contributor.author | Lin, Chen-Hsi | en_US |
| dc.contributor.author | Hou, Tuo-Hung | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2015-07-21T08:31:06Z | |
| dc.date.available | 2015-07-21T08:31:06Z | |
| dc.date.issued | 2013-01-01 | en_US |
| dc.description.abstract | The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage. | en_US |
| dc.identifier.isbn | 978-1-4799-2306-9 | en_US |
| dc.identifier.issn | en_US | |
| dc.identifier.journal | 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124957 | |
| dc.identifier.wosnumber | WOS:000346509500064 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current | en_US |
| dc.type | Proceedings Paper | en_US |
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