GaN-based microcavity polariton light emitting diodes
| dc.citation.volume | 8278 | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Lai, Ying-Yu | en_US |
| dc.contributor.author | Huang, Si-Wei | en_US |
| dc.contributor.author | Chen, Jun-Rong | en_US |
| dc.contributor.author | Wu, Yung-Chi | en_US |
| dc.contributor.author | Lin, Shiang-Chi | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.author | Yamamoto, Yoshihisa | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:42Z | |
| dc.date.available | 2014-12-08T15:21:42Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons. | en_US |
| dc.identifier.doi | 10.1117/12.908343 | en_US |
| dc.identifier.isbn | 978-0-81948-921-0 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.908343 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15419 | |
| dc.identifier.wosnumber | WOS:000301055700010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaN | en_US |
| dc.subject | exciton-polariton | en_US |
| dc.subject | light emitting diode (LED) | en_US |
| dc.subject | Rabi splitting | en_US |
| dc.title | GaN-based microcavity polariton light emitting diodes | en_US |
| dc.type | Proceedings Paper | en_US |