Transportation model establishment of InGaZnO for thin film transistor device application
| dc.citation.epage | 1847 | en_US |
| dc.citation.spage | 1845 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Teng, Li-Feng | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chou, Yi-Teh | en_US |
| dc.contributor.author | Fan, Yang-Shun | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2017-04-21T06:48:37Z | |
| dc.date.available | 2017-04-21T06:48:37Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased loll and large Vth shifts, while N-2 and O-2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed. | en_US |
| dc.identifier.issn | 1883-2490 | en_US |
| dc.identifier.journal | IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135583 | |
| dc.identifier.wosnumber | WOS:000393718700493 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Transportation model establishment of InGaZnO for thin film transistor device application | en_US |
| dc.type | Proceedings Paper | en_US |
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