Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration

dc.contributor.author	Chiang, Cheng-Hao	en_US
dc.contributor.author	Hu, Yu-Chen	en_US
dc.contributor.author	Chen, Kuo-Hua	en_US
dc.contributor.author	Chiu, Chi-Tsung	en_US
dc.contributor.author	Chuang, Ching-Te	en_US
dc.contributor.author	Hwang, Wei	en_US
dc.contributor.author	Chiou, Jin-Chern	en_US
dc.contributor.author	Tong, Ho-Ming	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:30:49Z
dc.date.available	2014-12-08T15:30:49Z
dc.date.issued	2012	en_US
dc.description.abstract	Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.	en_US
dc.identifier.isbn	978-1-4673-1638-5	en_US
dc.identifier.issn	2150-5934	en_US
dc.identifier.journal	2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/22016
dc.identifier.wosnumber	WOS:000319528300007
dc.language.iso	en_US	en_US
dc.title	Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration	en_US
dc.type	Proceedings Paper	en_US

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