Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band

Abstract

In this work, AlGaN/GaN HEMTs on silicon with slant field platehave been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 x 100 mu m(2) slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (f(T)) of 24 GHz, a maximum oscillation frequency (f(max)) of 49 GHz and an output power density of 5.0 W/mm at X-band.