APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE
| dc.citation.epage | 324 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 321 | en_US |
| dc.citation.volume | 49 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | LIU, WC | en_US |
| dc.contributor.author | LOUR, WS | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:46Z | |
| dc.date.available | 2014-12-08T15:05:46Z | |
| dc.date.issued | 1989-09-01 | en_US |
| dc.identifier.doi | 10.1007/BF00616861 | en_US |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/BF00616861 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4297 | |
| dc.identifier.wosnumber | WOS:A1989AM13900014 | |
| dc.language.iso | en_US | en_US |
| dc.title | APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE | en_US |
| dc.type | Article | en_US |
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