Copper metalized ohmic contact electrode of compound device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07368822 | zh_TW |
| dc.contributor.author | Lee | en_US |
| dc.contributor.author | Cheng-Shih | en_US |
| dc.contributor.author | Chang | en_US |
| dc.contributor.author | Edward Yi | en_US |
| dc.contributor.author | Chen | en_US |
| dc.contributor.author | Ke-Shian | en_US |
| dc.date.accessioned | 2014-12-16T06:14:30Z | |
| dc.date.available | 2014-12-16T06:14:30Z | |
| dc.date.issued | 2008-05-06 | en_US |
| dc.description.abstract | The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers. | zh_TW |
| dc.identifier.govdoc | H01L023/52 | zh_TW |
| dc.identifier.govdoc | H01L023/48 | zh_TW |
| dc.identifier.govdoc | H01L029/40 | zh_TW |
| dc.identifier.govdoc | H01L029/06 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104770 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Copper metalized ohmic contact electrode of compound device | zh_TW |
| dc.type | Patents | en_US |