利用氘化及氮化處理製備高可靠性薄閘氧化層深次微米NMOS元件
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:49:26Z | |
| dc.date.available | 2014-12-13T10:49:26Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-045 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542146&docId=99594 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101648 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 金氧半導體 | zh_TW |
| dc.subject | 熱載子可靠性 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 界面特性化 | zh_TW |
| dc.subject | 氮化閘極氧化層 | zh_TW |
| dc.subject | 氘氣回火製程 | zh_TW |
| dc.subject | MOS | en_US |
| dc.subject | Hot carrier reliability | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | Interface characterization | en_US |
| dc.subject | Nitrided gate oxide | en_US |
| dc.subject | Deuterium annealing | en_US |
| dc.title | 利用氘化及氮化處理製備高可靠性薄閘氧化層深次微米NMOS元件 | zh_TW |
| dc.title | Highly Reliable Thin Gate Oxide Deep-Submicron N-MOSFET by Deuterium and Nitrogen Treatments | en_US |
| dc.type | Plan | en_US |