<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

刺激目標範圍標定裝置

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI442905zh_TW
dc.contributor.author蔡 德明en_US
dc.contributor.author孫樹海en_US
dc.contributor.author李宜軒en_US
dc.date.accessioned2014-12-16T06:11:59Z
dc.date.available2014-12-16T06:11:59Z
dc.date.issued2014-07-01en_US
dc.description.abstract本發明係提供一種刺激目標範圍標定裝置,係應用微電極記錄及電阻抗斷層造影技術配合複合式探針,該複合式探針係包含至少一微電極記錄感測器和複數個微電極,以在複合式探針以微電極記錄訊號為導引植入符合刺激目標的深度後,利用該複數個微電極描繪出複合式探針周圍的組織結構,而標定出刺激目標的範圍及植入該複合式探針之精確位置。據此,本案係具有檢測快速、精確等優點,並解決現有深層腦部電刺激技術無法得知精確植入位置的問題。zh_TW
dc.identifier.govdocA61B005/04zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/103320
dc.language.isozh_TWen_US
dc.title刺激目標範圍標定裝置zh_TW
dc.typePatentsen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
I442905.pdf
Size:
1.36 MB
Format:
Adobe Portable Document Format

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: