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Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology

dc.citation.epage549en_US
dc.citation.issueen_US
dc.citation.spage543en_US
dc.citation.volume308en_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLiu, Cen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorDun, JWen_US
dc.contributor.authorChou, KSen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:01:23Z
dc.date.available2014-12-08T15:01:23Z
dc.date.issued1997-10-31en_US
dc.description.abstractThe effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A.en_US
dc.identifier.doi10.1016/S0040-6090(97)00490-2en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(97)00490-2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/239
dc.identifier.wosnumberWOS:000071553400100
dc.language.isoen_USen_US
dc.subjectchemical-mechanical polishingen_US
dc.subjectshallow trench isolation technologyen_US
dc.titleEffects of underlying films on the chemical-mechanical polishing for shallow trench isolation technologyen_US
dc.typeArticle; Proceedings Paperen_US

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