SIMULATION OF ELECTRIC FIELD DISTRIBUTION IN CMOS SINGLE PHOTON AVALANCHE DIODES AT BREAKDOWN VOLTAGE
| dc.citation.epage | 188 | en_US |
| dc.citation.spage | 187 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Wu, Jau-Yang | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2016-03-28T00:05:44Z | |
| dc.date.available | 2016-03-28T00:05:44Z | |
| dc.date.issued | 2014-01-01 | en_US |
| dc.description.abstract | We simulate the electric field distribution in single-photon avalanche diodes (SPADs) fabricated by CMOS 0.25-mu m high-voltage technology to explain the observed non-uniform 2-D photo-count mapping. The cause of non-uniform electric field distribution at the breakdown voltage is discussed with the aid of simulation. A method for improving the electric field uniformity is also proposed accordingly. | en_US |
| dc.identifier.issn | 2160-5033 | en_US |
| dc.identifier.journal | 2014 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/129802 | |
| dc.identifier.wosnumber | WOS:000366524800094 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | SIMULATION OF ELECTRIC FIELD DISTRIBUTION IN CMOS SINGLE PHOTON AVALANCHE DIODES AT BREAKDOWN VOLTAGE | en_US |
| dc.type | Proceedings Paper | en_US |
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