High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 281 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Kumar, D. | en_US |
| dc.contributor.author | Tseng, T. Y. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-03T06:48:01Z | |
| dc.date.available | 2019-04-03T06:48:01Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and -0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x10(3)) during the test without any degradation, good retention ability (> 10(4) s) at a temperature of 120 C-degrees with more than 10(2) on/off resistance ratio. | en_US |
| dc.identifier.doi | 10.1088/1757-899X/281/1/012028 | en_US |
| dc.identifier.issn | 1757-8981 | en_US |
| dc.identifier.journal | 1ST INTERNATIONAL WORKSHOP ON MATERIALS SCIENCE AND MECHANICAL ENGINEERING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/1757-899X/281/1/012028 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147019 | |
| dc.identifier.wosnumber | WOS:000426788700028 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure | en_US |
| dc.type | Proceedings Paper | en_US |