Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer

Abstract

In this study, we investigated the resistive switching characteristics of the SrZrO3 (SZO)-based resistance random access memory (RRAM). After the sequential thin-films Pt/Ti/SZO/LaNiO3 deposition, the post annealing (PA) treatment under various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. It can be proved that the Ti modulation layer act as an oxygen getter can modify the resistive switching property of RRAM. With the suitable thickness of Ti layer and the proper annealing temperature, the SZO-based RRAM device could have a lower operation voltage, a lower compliance current a long retention behavior, and stable resistance ratio over 10(4) s under 0.3 V reading voltage.