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The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications

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dc.citation.woscount0en_US
dc.contributor.authorLin, Chih Juen_US
dc.contributor.authorLee, Ming Lingen_US
dc.contributor.authorChang, Kow Mingen_US
dc.contributor.authorChang, Shan Weien_US
dc.contributor.authorChen, Hsiangen_US
dc.contributor.authorKao, Chyuan Hauren_US
dc.contributor.authorSung, Wei Kungen_US
dc.contributor.authorKuo, Min Hauen_US
dc.contributor.authorChang, Che Weien_US
dc.contributor.authorChang, Chia Lunen_US
dc.contributor.authorLin, Chun Fuen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:49:28Z
dc.date.available2017-04-21T06:49:28Z
dc.date.issued2014en_US
dc.description.abstractIn the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.en_US
dc.identifier.isbn978-1-4799-3282-5en_US
dc.identifier.journal2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136233
dc.identifier.wosnumberWOS:000380478500465en_US
dc.language.isoen_USen_US
dc.titleThe Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applicationsen_US
dc.typeProceedings Paperen_US

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