Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers

dc.citation.epageen_US
dc.citation.issue4en_US
dc.citation.volume48en_US
dc.contributor.authorChiu, Chia-Sungen_US
dc.contributor.authorChang, Ching-Chunen_US
dc.contributor.authorKu, Chia-Linen_US
dc.contributor.authorPeng, Kang-Mingen_US
dc.contributor.authorJeng, Erik S.en_US
dc.contributor.authorChen, Wen-Linen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorWu, Lin-Kunen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:40:53Z
dc.date.available2014-12-08T15:40:53Z
dc.date.issued2009-04-01en_US
dc.description.abstractA surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 mu m process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70 mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications. (C) 2009 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.1143/JJAP.48.04C182en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C182en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27876
dc.identifier.wosnumberWOS:000265652700183
dc.language.isoen_USen_US
dc.titleImplementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiersen_US
dc.typeArticle; Proceedings Paperen_US

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