High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric
| dc.citation.epage | G298 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | G295 | en_US |
| dc.citation.volume | 155 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Pan, H. C. | en_US |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Hsu, H. H. | en_US |
| dc.contributor.author | Hsiao, C. N. | en_US |
| dc.contributor.author | Chou, C. P. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:50Z | |
| dc.date.available | 2014-12-08T15:12:50Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V(2) and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.2993977 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2993977 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9893 | |
| dc.identifier.wosnumber | WOS:000260479700065 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric | en_US |
| dc.type | Article | en_US |