Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS

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dc.citation.epage122en_US
dc.citation.spage121en_US
dc.contributor.authorSun, SCen_US
dc.contributor.authorWang, LSen_US
dc.contributor.authorYeh, FLen_US
dc.contributor.authorChen, CHen_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:27:48Z
dc.date.available2014-12-08T15:27:48Z
dc.date.issued1995en_US
dc.identifier.doi10.1109/VLSIT.1995.520887en_US
dc.identifier.isbn0-7803-2602-4en_US
dc.identifier.journal1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/VLSIT.1995.520887en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20049
dc.identifier.wosnumberWOS:A1995BE44J00061
dc.language.isoen_USen_US
dc.titleRapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOSen_US
dc.typeProceedings Paperen_US

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