以半導體量子點加強螢光效率之高分子發光二極體
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200726822 | zh_TW |
| dc.contributor.author | 韋光華 | en_US |
| dc.contributor.author | 周嘉宏 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:17Z | |
| dc.date.available | 2014-12-16T06:13:17Z | |
| dc.date.issued | 2007-07-16 | en_US |
| dc.description.abstract | 本發明為提供可製成高分子發光二極體之奈米複材,而奈米複材是導入具表面改質之硫化鎘(量子點)於樹枝狀聚茀發光高分子而形成,並可有效地提升螢光發光效率及電激光效率,製成發光二極體元件後亦能增加元件之穩定性及電性。 | zh_TW |
| dc.identifier.govdoc | C09K011/06 | zh_TW |
| dc.identifier.govdoc | H05B033/14 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104072 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以半導體量子點加強螢光效率之高分子發光二極體 | zh_TW |
| dc.type | Patents | en_US |