Thermal Behavior and self-heating effect in pentacene-based thin film transistors
| dc.citation.epage | 204 | en_US |
| dc.citation.spage | 202 | en_US |
| dc.contributor.author | Wei, Shih-Chiang | en_US |
| dc.contributor.author | Lee, Po-Tsung | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Lee, Cheng-Chung | en_US |
| dc.contributor.author | Ho, Jia-Chong | en_US |
| dc.contributor.author | Hu, Tang-Hsiang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:29Z | |
| dc.date.available | 2014-12-08T15:25:29Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | Pentacene-based thin film transitors are characterized at four different substrate tempertures (25 degrees C, 45 degrees C, 65 degrees C, and 85 degrees C). The temperature dependence of mobility, threshold voltage, and drain current at and above room temperature is investigated, and self-heating effect is observed and discussed. | en_US |
| dc.identifier.isbn | 978-957-28522-2-4 | en_US |
| dc.identifier.journal | IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17893 | |
| dc.identifier.wosnumber | WOS:000259399200053 | |
| dc.language.iso | en_US | en_US |
| dc.title | Thermal Behavior and self-heating effect in pentacene-based thin film transistors | en_US |
| dc.type | Proceedings Paper | en_US |
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