A 69 mu W CMOS Smart Temperature Sensor with an Inaccuracy of +/- 0.8 degrees C (3 sigma) from-50 degrees C to 150 degrees C

dc.citation.epage	1990	en_US
dc.citation.spage	1987	en_US
dc.contributor.author	Lee, Sheng-Cheng	en_US
dc.contributor.author	Chiueh, Herming	en_US
dc.contributor.department	電機資訊學士班	zh_TW
dc.contributor.department	Undergraduate Honors Program of Electrical Engineering and Computer Science	en_US
dc.date.accessioned	2014-12-08T15:30:11Z
dc.date.available	2014-12-08T15:30:11Z
dc.date.issued	2012	en_US
dc.description.abstract	A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm(2), is fabricated using the TSMC 0.18 mu m one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50 degrees C to 150 degrees C, archiving a 3 sigma resolution of +/- 0.8 degrees C.	en_US
dc.identifier.isbn	978-1-4577-1766-6	en_US
dc.identifier.issn	1930-0395	en_US
dc.identifier.journal	2012 IEEE SENSORS PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/21624
dc.identifier.wosnumber	WOS:000315671100474
dc.language.iso	en_US	en_US
dc.title	A 69 mu W CMOS Smart Temperature Sensor with an Inaccuracy of +/- 0.8 degrees C (3 sigma) from-50 degrees C to 150 degrees C	en_US
dc.type	Proceedings Paper	en_US

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