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具有空氣介質層之半導體光電元件及空氣介質層之製作方法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI460885zh_TW
dc.contributor.author盧廷昌en_US
dc.contributor.author黃煇閔en_US
dc.contributor.author郭浩中en_US
dc.contributor.author王興宗en_US
dc.date.accessioned2014-12-16T06:14:02Z
dc.date.available2014-12-16T06:14:02Z
dc.date.issued2014-11-11en_US
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.govdocH01L033/10zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/104486
dc.language.isozh_TWen_US
dc.title具有空氣介質層之半導體光電元件及空氣介質層之製作方法zh_TW
dc.typePatentsen_US

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