Thermal stability of plasma-treated ohmic contacts to n-GaN

Abstract

In this study, the thermal stability of plasma-treated ohmic contacts by either Cl-2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600degreesC for 2h in N-2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.