Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chang, Chia-Hao | en_US |
| dc.contributor.author | Li, Zong-Lin | en_US |
| dc.contributor.author | Lu, Hong-Ting | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:15Z | |
| dc.date.available | 2017-04-21T06:49:15Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.abstract | The mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented. | en_US |
| dc.identifier.issn | 2160-9020 | en_US |
| dc.identifier.journal | 2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/136151 | |
| dc.identifier.wosnumber | WOS:000369908602471 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate | en_US |
| dc.type | Proceedings Paper | en_US |
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