Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy
| dc.citation.epage | 309 | en_US |
| dc.citation.spage | 308 | en_US |
| dc.contributor.author | Li, Heng | en_US |
| dc.contributor.author | Cheng, Hui-Yu | en_US |
| dc.contributor.author | Chen, Wei-Liang | en_US |
| dc.contributor.author | Huang, Yi-Hsin | en_US |
| dc.contributor.author | Li, Chi-Kang | en_US |
| dc.contributor.author | Chang, Chiao-Yun | en_US |
| dc.contributor.author | Wu, Yuh-Renn | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Chang, Yu-Ming | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2018-08-21T05:57:11Z | |
| dc.date.available | 2018-08-21T05:57:11Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | We performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution. | en_US |
| dc.identifier.journal | 2017 22ND MICROOPTICS CONFERENCE (MOC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147167 | |
| dc.identifier.wosnumber | WOS:000427705300140 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy | en_US |
| dc.type | Proceedings Paper | en_US |
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