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次7奈米鰭式元件世代新穎元件架構與通道材料之開發( II )

dc.contributor.author簡昭欣zh_TW
dc.contributor.author葉文冠zh_TW
dc.contributor.department國立交通大學電子工程學系及電子研究所 zh_TW
dc.date.accessioned2016-12-20T03:56:42Z
dc.date.available2016-12-20T03:56:42Z
dc.date.issued2016en_US
dc.description.abstract zh_TW
dc.description.abstract en_US
dc.description.sponsorship科技部 zh_TW
dc.identifier.govdocMOST105-2119-M009-004 zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11842146&docId=483809en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/131766
dc.language.isozh_TWen_US
dc.subject zh_TW
dc.subject en_US
dc.title次7奈米鰭式元件世代新穎元件架構與通道材料之開發( II )zh_TW
dc.titleExploration of Novel Device Structure and New Channel Material for Sub-7nm Technology Node Finfet( II )en_US
dc.typePlanen_US

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