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Making a direct electrical contact to InGaN/GaN nanorod LEDs: high output power density

dc.citation.spage441en_US
dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorLin, Shawn-Yuen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.department交大-IBM智慧物聯網與巨量資料分析研發中心zh_TW
dc.date.accessioned2018-08-21T05:56:29Z
dc.date.available2018-08-21T05:56:29Z
dc.date.issued2009-01-01en_US
dc.description.abstractWe realize a new scheme for making a direct contact to a two-dimensional (2D) nanorod LED array using the oblique-angle deposition. More importantly, we demonstrate highly efficient carrier injection into the nanorods. (C) 2006 Optical Society of Americaen_US
dc.identifier.journal2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/146261
dc.identifier.wosnumberWOS:000274751300222en_US
dc.language.isoen_USen_US
dc.titleMaking a direct electrical contact to InGaN/GaN nanorod LEDs: high output power densityen_US
dc.typeProceedings Paperen_US

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