Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias
| dc.citation.epage | 133 | en_US |
| dc.citation.spage | 132 | en_US |
| dc.contributor.author | Chiang, LP | en_US |
| dc.contributor.author | Tsai, CW | en_US |
| dc.contributor.author | Wang, T | en_US |
| dc.contributor.author | Liu, UC | en_US |
| dc.contributor.author | Wang, MC | en_US |
| dc.contributor.author | Hsia, LC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:03Z | |
| dc.date.available | 2014-12-08T15:27:03Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.abstract | Enhanced hot carrier degradation is observed in DTMOS-like operation mode. This phenomenon is attributed to Auger recombination assisted hot electron process. Measured hot electron gate current and light emission spectrum in nMOSFETs provide evidence that the high-energy tail of channel electrons is increased by the application of a positive substrate bias. As opposed to conventional hot carrier degradation, the Auger enhanced degradation exhibits positive temperature dependence and is more significant at low drain bias. | en_US |
| dc.identifier.doi | 10.1109/VLSIT.2000.852798 | en_US |
| dc.identifier.isbn | 0-7803-6306-X | en_US |
| dc.identifier.journal | 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VLSIT.2000.852798 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19276 | |
| dc.identifier.wosnumber | WOS:000088359300052 | |
| dc.language.iso | en_US | en_US |
| dc.title | Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias | en_US |
| dc.type | Proceedings Paper | en_US |