Anisotropic Structure Induced Electrical Properties of A-plane InN
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chang, P. -H. | en_US |
| dc.contributor.author | Chia, J. -W. | en_US |
| dc.contributor.author | Gwo, S. | en_US |
| dc.contributor.author | Ahn, H. | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2015-12-02T03:00:51Z | |
| dc.date.available | 2015-12-02T03:00:51Z | |
| dc.date.issued | 2013-01-01 | en_US |
| dc.description.abstract | Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects. | en_US |
| dc.identifier.isbn | 978-1-55752-973-2 | en_US |
| dc.identifier.issn | 2160-9020 | en_US |
| dc.identifier.journal | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/128488 | |
| dc.identifier.wosnumber | WOS:000355262503320 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Anisotropic Structure Induced Electrical Properties of A-plane InN | en_US |
| dc.type | Proceedings Paper | en_US |
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